Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor

Shi, ST; Chen, R; Liu, R; Chen, M; Shen, C; Li, XT; Tian, HN; Chen, L

Shi, ST (corresponding author), Univ Saskatchewan, Saskatoon, SK, Canada.; Shi, ST (corresponding author), China Inst Atom Energy, Beijing, Peoples R China.

JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2021; 37 (2): 271

Abstract

A triple modular redundancy SRAM was designed as the embedded high-speed memory for a radiation-tolerant ARM processor with ST Microelectronics 28-nm ......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索