1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

Zhao, SL; Wang, ZZ; Chen, DZ; Wang, MJ; Dai, Y; Ma, XH; Zhang, JC; Hao, Y

Zhang, JC (reprint author), Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China.

CHINESE PHYSICS B, 2019; 28 (2):

Abstract

In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor (DH HEMT) with a gate-drain spaci......

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