Lateral 1.8 kV beta-Ga2O3 MOSFET With 155 MW/cm(2) Power Figure of Merit

Tetzner, K; Treidel, EB; Hilt, O; Popp, A; Bin Anooz, S; Wagner, G; Thies, A; Ickert, K; Gargouri, H; Wurfl, J

Tetzner, K (reprint author), Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany.

IEEE ELECTRON DEVICE LETTERS, 2019; 40 (9): 1503

Abstract

Lateral beta-Ga2O3 MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm(2) are demo......

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