Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode

Wang, LL; Yang, SY; Zhou, F; Gao, YQ; Duo, Y; Chen, RF; Yang, JK; Yan, JC; Wang, JX; Li, JM; Zhang, YF; Wei, TB

Wei, TB (通讯作者),Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.;Wei, TB (通讯作者),Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China.

SMALL, 2023; ():

Abstract

Epitaxy growth and mechanical transfer of high-quality III-nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important tec......

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