A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures

Piotrowicz, C; Mohamad, B; Rrustemi, B; Malbert, N; Jaud, MA; Vandendaele, W; Charles, M; Gwoziecki, R

Piotrowicz, C (通讯作者)，CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.;Piotrowicz, C (通讯作者)，Univ Bordeaux, IMS Lab, CNRS, UMR 5218, F-33400 Talence, France.;Piotrowicz, C (通讯作者)，Univ Grenoble Alpes, F-38000 Grenoble, France.

SOLID-STATE ELECTRONICS, 2022; 194 ():

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