Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots

Derebezov, IA; Gaisler, VA; Gaisler, AV; Dmitriev, DV; Toropov, AI; von Helversen, M; de la Haye, C; Bounouar, S; Reitzenstein, S

Derebezov, IA (reprint author), Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia.; Derebezov, IA (reprint author), Siberian State Univ Telecommun & Informat Sci, Novosibirsk 630102, Russia.

SEMICONDUCTORS, 2018; 52 (11): 1437

Abstract

A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap AlxIn1 -xAs alloys as a basis for quantum dots provides a means......

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