Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials

Zhao, C; Li, ZN; Tang, TY; Sun, JQ; Zhan, WK; Xu, B; Sun, HJ; Jiang, H; Liu, K; Qu, SC; Wang, ZJ; Wang, ZG

Zhao, C; Wang, ZJ (corresponding author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.; Zhao, C; Wang, ZJ (corresponding author), Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

PROGRESS IN QUANTUM ELECTRONICS, 2021; 76 ():

Abstract

III-V semiconductor materials are the basis of photonic devices due to their unique optical properties. There is an increasing demand for fabricating ......

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