Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN

Mogilatenko, A; Knauer, A; Zeimer, U; Netzel, C; Jeschke, J; Unger, RS; Hartmann, C; Wollweber, J; Dittmar, A; Juda, U; Weyers, M; Bickermann, M

Mogilatenko, A (reprint author), Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany.; Mogilatenko, A (reprint author), Humboldt Univ, Inst Phys, Newtonstr 15, D-12489 Berlin, Germany.

JOURNAL OF CRYSTAL GROWTH, 2019; 505 (): 69

Abstract

MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density (< 10(5) cm(-2)) can result in enhanced defect formation. ......

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