AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate

Comyn, R; Chenot, S; El Alouani, W; Nemoz, M; Frayssinet, E; Damilano, B; Cordier, Y

Comyn, R; Cordier, Y (reprint author), Univ Cote Azur, CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018; 215 (9):

Abstract

In the present work, a Si (111) substrate has been patterned with 120-m wide square mesas separated by 5-m deep grooves. An Al0.29Ga0.71N/GaN HEMT str......

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