Simulation-based study on characteristics of dual vertical transfer gates in sub-micron pixels for CMOS image sensors-MedSci.cn

Simulation-based study on characteristics of dual vertical transfer gates in sub-micron pixels for CMOS image sensors

Lee, W; Ko, S; Kim, JH; Kim, YS; Kwon, U; Kim, H; Kim, DS

Lee, W (通讯作者)，Samsung Elect Co, Innovat Ctr, Computat Sci & Engn Team, Device Solut Business, Hwasung Si, Gyeonggi Do, South Korea.

SOLID-STATE ELECTRONICS, 2022; 198 ():

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