Dual-Function Device Fabricated Using One Single SiO2 Resistive Switching Layer-MedSci.cn

Dual-Function Device Fabricated Using One Single SiO2 Resistive Switching Layer

Jhang, WC; Hsu, CC

Hsu, CC (通讯作者)，Natl Yunlin Univ Sci & Technol, Grad Sch Engn Sci & Technol, Touliu 64002, Yunlin, Taiwan.;Hsu, CC (通讯作者)，Natl Yunlin Univ Sci & Technol, Grad Sch Elect Engn, Touliu 64002, Yunlin, Taiwan.

IEEE ELECTRON DEVICE LETTERS, 2022; 43 (9): 1428

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