Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

Tautz, M; Kuchenbrod, MT; Hertkorn, J; Weinberger, R; Welzel, M; Pfitzner, A; Diaz, DD

Diaz, DD (corresponding author), Univ Regensburg, Univ Str 31, D-93053 Regensburg, Germany.; Diaz, DD (corresponding author), Univ La Laguna, Dept Quim Organ, Astrofis Francisco Sanchez S-N, Tenerife 38206, Spain.; Diaz, DD (corresponding author), Univ La Laguna, Inst Univ Bioorgan Antonio Gonzalez, Astrofis Francisco Sanchez S-N, Tenerife 38206, Spain.

BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2020; 11 (): 41

Abstract

Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today's production of blue and white light emitting diodes (LEDs). Bo......

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