High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation-MedSci.cn

High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation

Chen, LL; Li, JX; Wang, YP; Feng, HW; Yan, DW; Gu, XF

Yan, DW (通讯作者)，Jiangnan Univ, Engn Res Ctr IOT Technol Applicat, Wuxi 214122, Jiangsu, Peoples R China.

SOLID-STATE ELECTRONICS, 2022; 189 ():

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