Atomic layer deposition of CoF2, NiF2 and HoF3 thin films

Atosuo, E; Maentymaeki, M; Pesonen, L; Mizohata, K; Hatanpää, T; Leskelae, M; Ritala, M

Atosuo, E; Ritala, M (通讯作者)，Univ Helsinki, Dept Chem, Helsinki, Finland.

DALTON TRANSACTIONS, 2023; 52 (31): 10844

Abstract

The present study describes atomic layer deposition (ALD) processes and characterization of CoF2, NiF2, and HoF3 thin films. For CoF2 deposition CoCl2......

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