Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN

Zhou, R; Feng, MX; Wang, J; Zhong, YZ; Sun, Q; Liu, JX; Huang, YN; Zhou, Y; Gao, HW; Ikeda, M; Li, ZY; Zhao, YF; Liu, T; Yang, H

Sun, Q (corresponding author), Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China.; Feng, MX; Sun, Q (corresponding author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.; Feng, MX; Sun, Q (corresponding author), Chinese Acad Sci, Guangdong Foshan Branch, Suzhou Inst Nanotech & Nanobion, Foshan 528000, Peoples R China.

SOLID-STATE ELECTRONICS, 2020; 171 ():

Abstract

This letter reports a systematic study about the effect of surface stoichiometry induced by inductively coupled plasma (ICP) etching on the ohmic cont......

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