Smooth, low rate, selective GaN/AlGaN etch

Beheshti, M; Westerman, R

Beheshti, M (corresponding author), Plasma Therm LLC, 10050 16th St N, St Petersburg, FL 33716 USA.

AIP ADVANCES, 2021; 11 (2):

Abstract

The aluminum content is widely used in III-N semiconductors as a determiner of material etch characters. Applications consisting of thin GaN/AlGaN het......

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