High mobility germanium-on-insulator p-channel FinFETs-MedSci.cn

High mobility germanium-on-insulator p-channel FinFETs

Liu, H; Han, GQ; Zhou, JR; Liu, Y; Hao, Y

Han, GQ; Zhou, JR (corresponding author), Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China.

SCIENCE CHINA-INFORMATION SCIENCES, 2021; 64 (4):

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