Rigorous Characteristics of Dual-material Gate Nanoscale S-FED

Touchaei, BJ; Manavizadeh, N

Touchaei, BJ (reprint author), KN Toosi Univ Technol, Fac Elect Engn, Sci, Tehran 1631714191, Iran.

2017 25TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2017; ( ): 360

Abstract

Nanoscale side-contacted field effect diode (S-FED) has been introduced to realize high frequency and low power consumption in the realm of the logic ......

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