p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

Chowdhury, N; Lemettinen, J; Xie, QY; Zhang, YH; Rajput, NS; Xiang, P; Cheng, K; Suihkonen, S; Then, HW; Palacios, T

Chowdhury, N (reprint author), MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA.

IEEE ELECTRON DEVICE LETTERS, 2019; 40 (7): 1036

Abstract

In this letter, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al0.2Ga0.8N (15 nm)/GaN heterostructure grown by metalorganic ch......

Full Text Link


Links

期刊讨论 | 中国SCI论文 | 期刊主页 | 投稿经验 | 杂志官网 | 投稿链接 | 作者需知 | PMC链接 | Pubmed全文检索