An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs

Kini, RL; Dhakal, S; Mahmud, S; Sellers, AJ; Hontz, MR; Tine, CA; Khanna, R

Khanna, R (corresponding author), Univ Toledo, Toledo, OH 43606 USA.

IEEE ACCESS, 2020; 8 (): 137312

Abstract

This paper presents a frequency dependent reliability study of commercially available GaN HEMTs. Both circuit and device-level experiments were perfor......

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