High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM)

Yoda, H; Sugiyama, H; Inokuchi, T; Kato, Y; Ohsawa, Y; Abe, K; Shimomura, N; Saito, Y; Shirotori, S; Koi, K; Altansargai, B; Oikawa, S; Shimizu, M; Ishikawa, M; Ikegami, K; Kamiguchi, Y; Fujita, S; Kurobe, A

Yoda, H (reprint author), Toshiba Co Ltd, Corp R&D Ctr, Kawasaki, Kanagawa, Japan.

2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2017; ( ): 165

Abstract

We propose a new spintronics-based memory architecture with 2 MTJs and 4 transistors as a unit cell for high-speed application. The architecture emplo......

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