Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices

Koveshnikov, S; Kononenko, O; Soltanovich, O; Kapitanova, O; Knyazev, M; Volkov, V; Yakimov, E

Koveshnikov, S (通讯作者)，Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia.

NANOMATERIALS, 2022; 12 (20):

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