Tungsten-Gated GaN/AlGaN p-FET With I-max > 120 mA/mm on GaN-on-Si-MedSci.cn

Tungsten-Gated GaN/AlGaN p-FET With I-max > 120 mA/mm on GaN-on-Si

Chowdhury, N; Xie, QY; Palacios, T

Chowdhury, N (通讯作者)，MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA.

IEEE ELECTRON DEVICE LETTERS, 2022; 43 (4): 545

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