Low-loss carrier-stored IGBT with p-type Schottky diode-clamped shielding layer

Yi, B; Zhao, Q; Zhang, Q; Cheng, JJ; Huang, HM; Pan, YL; Hu, XR; Xiang, Y

Hu, XR (corresponding author), Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu, Peoples R China.

JOURNAL OF POWER ELECTRONICS, 2021; 21 (8): 1225

Abstract

A novel carrier-stored trench bipolar transistor (CSTBT) with heavily doped carrier-stored layer (CSL) is proposed and investigated by TCAD tools. The......

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