Aggressive Equivalent Oxide Thickness of similar to 0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition-MedSci.cn

Aggressive Equivalent Oxide Thickness of similar to 0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

Lee, MC; Zhao, YY; Chen, WL; Wang, SY; Chen, YX; Luo, GL; Chien, CH

Chien, CH (通讯作者)，Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan.;Chien, CH (通讯作者)，Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan.;Luo, GL (通讯作者)，Natl Nano Device Labs, Hsinchu 30078, Taiwan.

内科

外科

专科科室

热点

按科室浏览

临床工具

科研工具

其他工具

科研数智化

真实世界研究解决方案

数字化学术传播解决方案

其它

Aggressive Equivalent Oxide Thickness of similar to 0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition

科室

工具

服务