Advances in ultrashallow doping of silicon

Zhang, CF; Chang, SN; Dan, YP

Dan, YP (corresponding author), Shanghai Jiao Tong Univ, Univ Michigan Shanghai Jiao Tong Univ Joint Inst, Shanghai 200240, Peoples R China.

ADVANCES IN PHYSICS-X, 2021; 6 (1):

Abstract

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum comput......

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