AlN/AlGaN/AlN quantum well channel HEMTs

Singhal, J; Kim, E; Hickman, A; Chaudhuri, R; Cho, YJ; Xing, HG; Jena, D

Singhal, J (通讯作者)，Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA.

APPLIED PHYSICS LETTERS, 2023; 122 (22):

Abstract

We present a compositional dependence study of electrical characteristics of AlxGa1-xN quantum well channel-based AlN/AlGaN/AlN high electron mobility......

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