One ε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity

An, YH; Gao, ZS; Guo, Y; Zhang, SH; Liu, Z; Tang, WH

Gao, ZS (通讯作者)，Guangdong Univ Technol, Sch Informat Engn, Guangzhou 510006, Peoples R China.;Liu, Z; Tang, WH (通讯作者)，Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Innovat Ctr Gallium Oxide Semicond IC GAO, Nanjing 210023, Peoples R China.

CHINESE PHYSICS B, 2023; 32 (5):

Abstract

The epsilon-Ga2O3 thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition (MOCVD) method, and then was used to fabri......

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