Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash emory Cells

Kang, HJ; Choi, N; Bae, JH; Park, BG; Lee, JH

Lee, JH (reprint author), Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea.

IEEE ELECTRON DEVICE LETTERS, 2017; 38 (7): 867

Abstract

The origin of two different hysteresis phenomena observed in a few cells of 3-D NAND flash memory with a tube-type poly-Si body was analyzed. To ident......

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