Characterization of Ga-face/Ga-face and N-face/N-face interfaces with antiparallel polarizations fabricated by surface-activated bonding of freestanding GaN wafers

Sawai, K; Liang, JB; Shimizu, Y; Ohno, Y; Nagai, Y; Shigekawa, N

Shigekawa, N (通讯作者)，Osaka City Univ, Grad Sch Engn, Osaka 5588585, Japan.;Shigekawa, N (通讯作者)，Osaka Metropolitan Univ, Grad Sch Engn, Osaka 5588585, Japan.

JAPANESE JOURNAL OF APPLIED PHYSICS, 2023; 62 (SN):

Abstract

Electrical properties of heterojunctions of group-III nitrides are largely sensitive to interface charges due to the discontinuity of polarizations. B......

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