On ev and ve-Degree Based Topological Indices of Silicon Carbides-MedSci.cn

On ev and ve-Degree Based Topological Indices of Silicon Carbides

Lee, JR; Hussain, A; Fahad, A; Raza, A; Qureshi, MI; Mahboob, A; Park, C

Qureshi, MI (通讯作者)，COMSATS Univ Islamabad, Dept Math, Vehari 61110, Pakistan.

CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES, 2022; 130 (2): 871

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