Gate-overlapped-source Heterojunction Tunnel Tri-gate FinFET

Kumar, P; Roy, S; Baishya, S

Kumar, P (reprint author), Natl Inst Technol Silchar, Silchar 788010, Assam, India.

PROCEEDINGS OF 2ND INTERNATIONAL CONFERENCE ON 2017 DEVICES FOR INTEGRATED CIRCUIT (DEVIC), 2017; ( ): 561

Abstract

We present a simulation study of gate-overlapped-source heterojunction tunnel Tri-gate FinFET (GoS-HTTFinFET). The small bandgap material (Ge) in the ......

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