Epitaxial growth of Mg2Si films on (111) Si substrates covered with epitaxial SiC layers

Katagiri, A; Ogawa, S; Shimizu, T; Matsushima, M; Akiyama, K; Uchida, H; Funakubo, H

Funakubo, H (corresponding author), Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, J2-43,4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan.

JAPANESE JOURNAL OF APPLIED PHYSICS, 2020; 59 ():

Abstract

Mg2Si films were prepared on (111) Si substrates covered with (111)-oriented SiC layers by a RF sputtering method. The prepared films were characteriz......

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