A ferroelectric semiconductor field-effect transistor

Si, MW; Saha, AK; Gao, SJ; Qiu, G; Qin, JK; Duan, YQ; Jian, J; Niu, C; Wang, HY; Wu, WZ; Gupta, SK; Ye, PDD

Ye, PDD (reprint author), Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA.; Ye, PDD (reprint author), Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA.

NATURE ELECTRONICS, 2019; 2 (12): 580

Abstract

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the ......

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