HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Marchishin, IV; Sabinina, IV; Sidorov, GY; Yakushev, MV; Varavin, VS; Remesnik, VG; Predein, AV; Dvoretsky, SA; Vasil'ev, VV; Sidorov, YG; Marin, DV; Kovchavtsev, AP; Latyshev, AV

Dvoretsky, SA (corresponding author), Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia.

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2020; 65 (3): 316

Abstract

Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 x 512 elements at a pitch of 25 mu m with......

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