Read-Write Circuit for STT-MRAM With Stochastic Switchings

Im, IY; Park, SG

Park, SG (reprint author), Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea.

IEEE TRANSACTIONS ON MAGNETICS, 2018; 54 (5):

Abstract

Spin-transfer torque magnetic random memory (STT-MRAM) is a promising candidate for universal memory due to its non-volatility, fast access speed, hig......

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