Surface passivation of 1550nm AlxInyAsSb avalanche photodiode

Guo, CY; Lv, YX; Zheng, DN; Sun, YY; Jiang, Z; Jiang, DW; Wang, GW; Xu, YQ; Wang, T; Tian, JS; Wu, ZX; Niu, ZC

Niu, ZC (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.; Niu, ZC (reprint author), Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China.

OPTOELECTRONIC DEVICES AND INTEGRATION VII, 2018; 10814 ():

Abstract

We report three kinds of surface passivation for AlxInyAsSb APD, which are SiO2, SiO2 after sulfuration and SU8 2005 treatments. A good sidewall profi......

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