Low Power and Ultrafast Multi-Stat Switching in nc-Al Induced Al < sub > 2 </sub > O < sub > 3 </sub >/Al < sub > x </sub > O < sub > y </sub > Bilayer Thin Film RRAM Device

Zhu, W; Li, J; Xu, XB; Zhang, L; Zhao, Y

Zhu, W (corresponding author), Changan Univ, Sch Elect & Control Engn, Xian 710064, Peoples R China.

IEEE ACCESS, 2020; 8 (): 16310

Abstract

Low power and ultrafast multi-state storage resistive switching memory (RRAM) device had been developed based on Al/Al2O3/AlxOy/Al structure. Both of ......

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