High power 3-bit GaN high-pass/low-pass phase shifter for X-band applications

Sun, PP; Liu, H; Geng, M; Zhang, R; Yuan, TT; Luo, WJ

Luo, WJ (reprint author), Univ Chinese Acad Sci, Inst Microelect, Chinese Acad Sci, Beijing, Peoples R China.

MICROELECTRONICS INTERNATIONAL, 2018; 35 (2): 92

Abstract

Purpose - The design and performance of X-band high power 3-bit phase shifter which has been fabricated in 0.25 mu m GaN HEMT technology are presented......

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