High-voltage AlInN/GaN superjunction fin-gate high electron mobility transistor for power-switching application

Zhou, WJ; Ye, Q; Dai, JY; Guo, TY; Zhang, JQ; Li, Z; Wu, Y; Zhao, ZY; Zhao, ZQ; Wei, ZH

Zhao, ZQ (corresponding author), Ningbo Univ, Dept Microelect Sci & Engn, Ningbo 315211, Peoples R China.

MICRO & NANO LETTERS, 2021; 16 (6): 363

Abstract

An AlInN/GaN superjunction fin-gate high electron mobility transistor (SJFin-HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN......

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