246 nm AlN-delta-GaN Quantum Well Ultraviolet Light-Emitting Diode

Li, C; Ooi, YK; Islam, SM; Xing, HL; Jena, D; Zhang, J

Li, C (reprint author), Rochester Inst Technol, Dept Elect & Microelect Engn, Rochester, NY 14623 USA.

2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2017; ( ):

Abstract

The 246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode was proposed and realized experimentally, with the dominant transverse electric......

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