Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study

Umeda, T; Okamoto, M; Yoshioka, H; Kim, GW; Ma, S; Arai, R; Makino, T; Ohshima, T; Harada, S

Umeda, T (reprint author), Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan.

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR, 2017; 80 (1): 147

Abstract

Using electrically-detected-magnetic-resonance spectroscopy and a device simulation, we studied dominant interface defects, named "C-face defects," in......

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