Boron doping in gallium oxide from first principles

Lehtomaki, J; Li, JR; Rinke, P

Lehtomaki, J (corresponding author), Aalto Univ, Dept Appl Phys, Aalto 00076, Finland.

JOURNAL OF PHYSICS COMMUNICATIONS, 2020; 4 (12):

Abstract

We study the feasibility of boron doping in gallium oxide (Ga2O3) for neutron detection. Ga2O3 is a wide band gap, radiation-hard material with potent......

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