Single-Atom Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides

Zhang, XK; Gao, L; Yu, HH; Liao, QL; Kang, Z; Zhang, Z; Zhang, Y

Zhang, Z; Zhang, Y (corresponding author), Univ Sci & Technol Beijing, Acad Adv Interdisciplinary Sci & Technol, Sch Mat Sci & Engn, Beijing 100083, Peoples R China.; Zhang, Z; Zhang, Y (corresponding author), Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing Key Lab Adv Energy Mat & Technol, Sch Mat Sci & Engn, Beijing 100083, Peoples R China.; Zhang, Z; Zhang, Y (corresponding author), Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Sch Mat Sci & Engn, Beiji

ACCOUNTS OF MATERIALS RESEARCH, 2021; 2 (8): 655

Abstract

Y CONSPECTUS: Faced with the growing quests of higher-performance chips, developing new channel semiconductors immune to short channel effects has bec......

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