Ultrasensitive negative capacitance phototransistors

Tu, LQ; Cao, RR; Wang, XD; Chen, Y; Wu, SQ; Wang, F; Wang, Z; Shen, H; Lin, T; Zhou, P; Meng, XJ; Hu, WD; Liu, Q; Wang, JL; Liu, M; Chu, JH

Hu, WD; Wang, JL (corresponding author), Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China.; Hu, WD; Wang, JL (corresponding author), Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China.; Liu, Q (corresponding author), Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.; Hu, WD; Wang, JL (corresponding author), Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China.

NATURE COMMUNICATIONS, 2020; 11 (1):

Abstract

Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, a......

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