Investigation of gate leakage current in TFET: A semi-numerical approach

Tawfik, NMS; Shaker, A; Sayed, I; Kamel, H; Salem, MS; Dessouky, M; Fedawy, M

Shaker, A (通讯作者),Ain Shams Univ, Fac Engn, Engn Phys & Math Dept, Cairo, Egypt.

ALEXANDRIA ENGINEERING JOURNAL, 2023; 72 (): 169

Abstract

Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace con-ventional MOSFETs in low-power applications. However, there are man......

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