Kinetic limitations of stress relaxation and generation in GaN/AlN and AlGaN: Si/AlN heterostructures grown on c-sapphire by plasma-assisted molecular beam epitaxy

Koshelev, OA; Nechaev, DV; Troshkov, SI; Ratnikov, VV; Jmerik, VN; Ivanov, SV

Koshelev, OA (reprint author), Ioffe Inst, 26 Polytekhn Skaya, St Petersburg 194021, Russia.

INTERNATIONAL CONFERENCE PHYSICA.SPB/2017, 2018; 1038 ():

Abstract

The paper describes experimental study of stress relaxation and generation in (1-2)-mu m-thick GaN and AlGaN layers grown on AlN/c-Al2O3 buffer layers......

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