Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors

Mallem, SPR; Im, KS; Thingujam, T; Lee, JH; Caulmilone, R; Cristoloveanu, S

Lee, JH (corresponding author), Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea.; Im, KS (corresponding author), Kumoh Natl Inst Technol, Adv Mat Res Ctr, Gumi 39177, South Korea.

ELECTRONIC MATERIALS LETTERS, 2020; 16 (5): 433

Abstract

Gate leakage current in lateral GaN wrap-gate nanowire transistors (WG-NWT) was investigated using current density-voltage (J(g)-V-g) characteristics ......

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