Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias-MedSci.cn

Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias

Qin, ZW; Chen, WC; Lo, HH; Hsin, YM

Hsin, YM (通讯作者)，Natl Cent Univ, Dept Elect Engn, Taoyuan 32001, Taiwan.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022; 11 (8):

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