A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics

Feng, N; Ji, N; Zhang, FX; Li, Y; Cai, PY; Li, H; Zhang, LM; Wang, RS; Huang, R

Zhang, LM (通讯作者)，Peking Univ, Sch Elect & Comp Engn, Shenzhen, Peoples R China.

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD, 2023; (): 121

Abstract

Trap effects in the metal-ferroelectric-silicon (MFS) FTJs are modeled in this work. From the charge conservation and voltage balancing principles, tr......

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